single discrete igbt 100 amperes/2500 volts QIS2510001 preliminary powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 1 01/10 rev. 0 outline drawing and circuit diagram dimensions inches millimeters a 2.11 53.6 b 0.98 25.0 c 2.01 51.0 d 0.2 5.0 e. 0.1 2.5 f 0.27 6.9 g 0.49 12.5 h 0.46 max. 11.8 max. description: powerex single non-isolated discrete is designed specially for customer high voltage switching and pulse power applications. features: ? low drive requirement ? low v ce(sat) ? molybdenum mounting plate dimensions inches millimeters j 0.14 3.6 k 0.22 5.7 l 0.43 10.8 m 0.04 1.0 n 0.43 10.9 p 0.02 0.5 q 0.21 dia. 5.3 dia. b g c a p n l m c (base) g (2) e (3) e (1) f k e (3) g (2) e (1) c (base) h j d e q
2 preliminary QIS2510001 single discrete igbt 100 amperes/2500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 01/10 rev. 0 maximum ratings, t j = 25 c unless otherwise specifed ratings symbol QIS2510001 units collector emitter voltage v ces 2500 volts gate emitter voltage v ges 20 volts collector current (dc, t c = 127c) i c 100 amperes peak collector current (pulsed) i cm 200* amperes junction temperature t j -55 to 150 c storage temperature t stg -55 to 125 c mounting torque, m5 mounting screws 30 in-lb weight (typical) 20 grams static electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 10ma, v ce = 10v 4.5 6.0 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 100a, v ge = 15v, t j = 25c 3.20 4.20** volts i c = 100a, v ge = 15v, t j = 125c 3.60 volts total gate charge q g v cc = 1250v, i c = 100a, v ge = 15v 450 nc dynamic electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units input capacitance c ies 10 nf output capacitance c oes v ge = 0v, v ce = 10v 1.1 nf reverse transfer capacitance c res 330 pf resistive turn-on delay time t d(on) v cc = 1250v, tbd s load rise time t r i c = 100a, tbd s switching turn-off delay time t d(off) v ge1 = v ge2 = 15v, tbd s times fall time t f r g = 30? tbd s turn-on switching energy e on t j = 125c, i c = 100a, v cc = 1250v, 125 mj/p turn-off switching energy e off v ge = 15v, r g = 30?, inductive load 100 mj/p thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) igbt 0.10 tbd c/w thermal resistance, case to sink r th(c-s) grease = 1w/mk 0.10 c/w thermal grease applied * pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed device rating. **pulse width and repetition rate should be such that device junction temperature rise is negligible.
3 preliminary QIS2510001 single discrete igbt 100 amperes/2500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 01/10 rev. 0 0 50 100 150 200 250 collector current, i c , (amperes) switching energy, (mj/p) switching energy characteristics (typical) 0 25 50 100 75 125 10 2 10 1 10 0 10 -1 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance characteristics (typical) 10 -1 10 0 10 1 10 2 collector current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 5 0 50 100 150 4 3 2 1 0 v ge = 15v t j = 25c t j = 125c 200 gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge characteristics (typical) 20 0 250 500 750 1000 16 12 8 4 0 v ge = 0v t j = 25c c ies , c oes : f = 100khz c res : f = 1mhz v cc = 1250v i c = 100a gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 0 4 8 12 16 20 8 6 4 2 0 t j = 25c t j = 25c v cc = 1250v v ge = 15v r g = 30? t j = 125c collector-emitter voltage, v ce , (voltage) collector current, i c , (amperes) output characteristics (typical) 200 150 0 2 4 8 100 50 0 10 6 200 150 0 4 8 16 100 50 0 20 12 gate-emitter voltage, v ge , (volts) collectorcurrent, i c , (amperes) transfer characteristics (typical) v ce = 10v t j = 25c t j = 125c c ies i c = 200a v ge = 20v 15v 14v 10v 11v 8v 9v 7v i c = 100a i c = 40a c oes c res e on e off 13v 12v
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